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Número de pieza | BLF546 | |
Descripción | UHF push-pull power MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF546 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLF546
UHF push-pull power MOS
transistor
Product specification
October 1992
1 page Philips Semiconductors
UHF push-pull power MOS transistor
Product specification
BLF546
handbook0, .h8alfpage
RDSon
(Ω)
0.6
MDA522
0.4
0.2
0
0 40 80 120 160
Tj (°C)
ID = 2.4 A; VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
250
handbook, halfpage
C
(pF)
200
MDA523
150
100
Cis
50 Cos
0
1 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
handbook,8h0alfpage
Crs
(pF)
60
MDA524
40
20
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
October 1992
5
5 Page Philips Semiconductors
UHF push-pull power MOS transistor
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
Product specification
BLF546
SOT268A
D
A
F
5
U1 B
qC
H1 w2 M C
14
c
H U2
A
P
23
b
e
w3 M
w1 M A B
E
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
DE e
F
H H1 p
Q q U1 U2 w1
mm
4.91
4.19
1.66
1.39
0.13 12.96 6.48
0.07 12.44 6.22
6.45
2.04 17.02 8.23
1.77 16.00 7.72
3.43
3.17
2.67
2.41
18.42
24.90
24.63
6.61
6.35
0.51
inches
0.193
0.165
0.065 0.005
0.055 0.003
0.510
0.490
0.255
0.245
0.254
0.080
0.070
0.670
0.630
0.324
0.304
0.135
0.125
0.105
0.095
0.725
0.980
0.970
0.260
0.250
0.02
w2
1.02
0.04
w3
0.26
0.01
OUTLINE
VERSION
SOT268A
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
October 1992
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BLF546.PDF ] |
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