(PDF) BLF346 Datasheet - VHF power MOS transistor

Número de pieza	BLF346
Descripción	VHF power MOS transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BLF346 VHF power MOS transistor Product speciﬁcation Supersedes data of September 1992 1996 Oct 02 1 page Philips Semiconductors VHF power MOS transistor Product speciﬁcation BLF346 handboo3k,4h0alfpage RDS on (mΩ) 280 MGG107 220 160 0 30 60 90 120 150 Tj (°C) ID = 5 A; VGS = 10 V. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. 800 C (pF) 600 C os 400 200 MRA930 C is 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. 300 handbook, halfpage Crs (pF) 200 MGG108 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. 1996 Oct 02 5 5 Page Philips Semiconductors VHF power MOS transistor PACKAGE OUTLINE Product speciﬁcation BLF346 handbook, full pagewidth 1 6.48 12.96 5.5 5.0 3 5 2.5 22 max 6.35 4 min 2 5.7 5.3 4 3.8 min 5.7 6 5.3 12.2 3.35 3.04 (2x) 4.50 4.05 7.5 max 25.2 max 18.42 0.14 ceramic 13 max BeO metal MBC877 Dimensions in mm. Fig.16 SOT119. 1996 Oct 02 11 11 Page

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PDF BLF346 Data sheet ( Hoja de datos )