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PDF BLF175 Data sheet ( Hoja de datos )
| Número de pieza | BLF175 | |
| Descripción | HF/VHF power MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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Hay una vista previa y un enlace de descarga de BLF175 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF175
HF/VHF power MOS transistor
Product specification
September 1992
1 page  
Philips Semiconductors
HF/VHF power MOS transistor
Product specification
BLF175
1.5
handbook, halfpage
RDS(on)
(Ω)
1
MGP066
0.5
0
0 50 100 Tj (°C) 150
ID = 1 A; VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
handboo4k,0h0alfpage
C
(pF)
300
MGP067
200
Cis
100
Cos
0
0 10 20 30 40 50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
150
handbook, halfpage
Crs
(pF)
100
MGP068
50
0
0 10 20 30 40 50
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
5 Page 
Philips Semiconductors
HF/VHF power MOS transistor
Product specification
BLF175
handbook, h0alfpage
d3
(dB)
−20
MGP078
handbook, h0alfpage
d5
(dB)
−20
MGP079
−40 −40
−60
0
20 40 60
PL (W) PEP
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.17 Third order intermodulation distortion as a
function of load power, typical values.
−60
0
20 40 PL (W) PEP 60
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.18 Fifth order intermodulation distortion as a
function of load power, typical values.
handbook, full pagewidth
50 Ω
output
C1
C2
f = 28 MHz.
C7
,,,, ,,C3
L1
C4
D.U.T.
L3
L2
L5
L4
R1 R3
R2 C5
C6 L6
+VG
Fig.19 Test circuit for class-AB operation.
C10
C11
C8
50 Ω
output
+VD
C9 C12
MGP080
September 1992
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BLF175.PDF ] | |
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