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Siemens Semiconductor Group - Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)

Numéro de référence BGX50A
Description Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BGX50A fiche technique
Silicon Switching Diode Array
q Bridge configuration
q High-speed switch diode chip
BGX 50 A
Type
BGX 50 A
Marking
U1s
Ordering Code
(tape and reel)
Q62702-G38
Pin Configuration
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Total power dissipation, TS = 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VR
VRM
IF
Ptot
Tj
Tstg
Values
Unit
50 V
70
140 mA
210 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JS
640
360
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91

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