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PDF BGA614 Data sheet ( Hoja de datos )
| Número de pieza | BGA614 | |
| Descripción | Silicon Germanium Broadband MMIC Amplifier | |
| Fabricantes | Infineon Technologies AG | |
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Data Sheet, Rev. 2.1, Sept. 2011
BGA614
Silicon Germanium Broadband MMIC Amplifier
RF & Protection Devices
1 page  
BGA614
Electrical Characteristics
Maximum Ratings
Table 1 Maximum ratings
Parameter
Symbol
Device voltage
VD
Device current
ID
Current into pin In
Iin
Input power1)
Pin
Total power dissipation, TS < 102 °C2)
Ptot
Junction temperature
TJ
Ambient temperature range
TA
Storage temperature range
TSTG
ESD capability all pins (HBM: JESD22-A114) VESD
1)Valid for ZS = ZL = 50 Ω, VCC = 5 V, RBias = 62 Ω
2) TS is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Limit Value
3
80
0.7
10
240
150
-65... 150
-65... 150
1000
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
Table 2 Thermal resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
200
1) For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
K/W
2 Electrical Characteristics
Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2)
VCC = 5 V, RBias = 62 Ω, Frequency = 2 GHz, unless otherwise specified
Table 3 Electrical Characteristics
Parameter
Symbol
Insertion power gain
|S21|2
Min.
Noise figure (ZS = 50 Ω)
F50Ω
Output power at 1 dB gain
compression
Output third order intercept point
Input return loss
Output return loss
Total device current
P-1dB
OIP3
RLin
RLout
ID
Values
Typ.
19.8
19.0
17.5
1.8
2.0
2.1
12
Max.
25
18
20
40
Unit
dB
dB
dB
dB
dB
dB
dBm
Note /
Test Condition
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.1 GHz
f = 1.0 GHz
f = 2.0 GHz
dBm
dB
dB
mA
Data Sheet
5 Rev. 2.1, 2011-09-02
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BGA614.PDF ] | |
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