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Infineon Technologies AG - DUAL N-Channel MOSFET Tetrode

Numéro de référence BG3230
Description DUAL N-Channel MOSFET Tetrode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BG3230 fiche technique
BG3230_BG3230R
DUAL N-Channel MOSFET Tetrode
Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
Two AGC amplifiers in one single package
Integrated stabilized bias network
Integrated gate protection diodes
High gain, low noise figure
Improved cross modulation at gain reduction
High AGC-range
4
5
6
3
2
1
VPS05604
BG3230
65
B
A
12
4
3
BG3230R
65
A
B
12
4
3
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3230
BG3230R
Package
SOT363
SOT363
1=G1
1=G1
Pin Configuration
2=G2 3=D 4=D 5=S
2=S 3=D 4=D 5=G2
6=G1
6=G1
Marking
KBs
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
±VG1/G2S
Ptot
Tstg
Tch
Thermal Resistance
Parameter
Symbol
Channel - soldering point1)
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
25
1
6
160
-55 ... 150
150
Value
280
Unit
V
mA
V
mW
°C
Unit
K/W
1 Feb-27-2004

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BG3230 DUAL N-Channel MOSFET Tetrode Infineon Technologies AG
Infineon Technologies AG
BG3230R DUAL N-Channel MOSFET Tetrode Infineon Technologies AG
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