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Numéro de référence | BG3140 | ||
Description | DUAL N-Channel MOSFET Tetrode | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BG3140...
DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• High AGC-range
4
5
6
3
2
1
VPS05604
BG3140
65
B
A
12
4
3
BG3140R
65
A
B
12
4
3
AGC G2
HF G1
Input
RG1
VGG
Drain HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3140
BG3140R
Package
SOT363
SOT363
1=G1
1=G1
Pin Configuration
2=G2 3=D 4=D 5=S
2=S 3=D 4=D 5=G2
6=G1
6=G1
Marking
KDs
KKs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation, TS ≤78°C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
±VG1/G2S
Ptot
Tstg
Tch
Thermal Resistance
Parameter
Symbol
Channel - soldering point1)
Rthchs
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
8
25
1
6
160
-55 ... 150
150
Value
≤280
Unit
V
mA
V
mW
°C
Unit
K/W
1 Feb-27-2004
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Pages | Pages 6 | ||
Télécharger | [ BG3140 ] |
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BG314 | Bluetooth Audio Module | BOUGH TECHNOLOGY |
BG3140 | DUAL N-Channel MOSFET Tetrode | Infineon Technologies AG |
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