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Infineon Technologies AG - HiRel NPN Silicon RF Transistor

Numéro de référence BFY420ES
Description HiRel NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFY420ES fiche technique
HiRel NPN Silicon RF Transistor
BFY420
HiRel Discrete and Microwave Semiconductor
For High Gain Low Noise Amplifiers
For Oscillators up to 10 GHz
Noise Figure F = 1.1 dB at 1.8 GHz
Outstanding Gms = 21dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 22 GHz
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 02
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY420 (ql)
Marking Ordering Code
- see below
Pin Configuration
1 23 4
CEBE
Package
Micro-X
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1662
on request
on request
Q62702F1709
Semiconductor Group
1 of 5
Draft B, September 99

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