DataSheetWiki


BFY181 fiches techniques PDF

Siemens Semiconductor Group - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Numéro de référence BFY181
Description HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





1 Page

No Preview Available !





BFY181 fiche technique
HiRel NPN Silicon RF Transistor
BFY 181
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ For low noise, high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
¥ Hermetically sealed microwave package
¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 181 (ql)
Marking Ordering Code
- see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1607
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1715
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS £ 137 °C 2)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
20
2 1)
175
200
- 65 É + 200
- 65 É + 200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction soldering point 2)
Rth JS
< 360
K/W
1) The maximum permissible base current for VFBE measurements is 15 mA (spot-measurement duration < 1 s).
2) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A04 1998-04-01

PagesPages 5
Télécharger [ BFY181 ]


Fiche technique recommandé

No Description détaillée Fabricant
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Siemens Semiconductor Group
Siemens Semiconductor Group
BFY180 HiRel NPN Silicon RF Transistor Infineon Technologies AG
Infineon Technologies AG
BFY180ES HiRel NPN Silicon RF Transistor Infineon Technologies AG
Infineon Technologies AG
BFY180H HiRel NPN Silicon RF Transistor Infineon Technologies AG
Infineon Technologies AG

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche