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Numéro de référence | BFS480 | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BFS480
NPN Silicon RF Transistor
For low noise, low-power amplifiersin mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
fT = 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2 B2
654
4
5
6
3
2
1
VPS05604
TR2
TR1
123
B1 E1 C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS480
Marking
REs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 112 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
8
10
10
2
10
1.2
80
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
470
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
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Pages | Pages 6 | ||
Télécharger | [ BFS480 ] |
No | Description détaillée | Fabricant |
BFS480 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) | Siemens Semiconductor Group |
BFS480 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFS481 | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) | Siemens Semiconductor Group |
BFS481 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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