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Número de pieza | BFS480 | |
Descripción | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFS480 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
• fT = 7GHz
F = 1.5dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 480
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 480 REs
Q62702-F1531
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 112 °C
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Junction - soldering point 1)
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
8
10
10
2
10
1.2
80
150
- 65 ... + 150
- 65 ... + 150
≤ 470
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
1 page BFS 480
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
0.40
pF
Ccb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
02468
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
22
V 12
VR
dB
G
18
8V
2V
16
1V
14
0.7V
12
10
8
0 2 4 6 8 mA 12
IC
Transition frequency fT = f (IC)
VCE = Parameter
10
GHz
fT 8
7
6
10V
5V
3V
2V
5
4 1V
0.7V
3
2
1
02468
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
mA 12
IC
15
dB
G 13
12
8V
3V
2V
11
10
9 1V
8
7 0.7V
6
5
0 2 4 6 8 mA 12
IC
Semiconductor Group
5
Dec-16-1996
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFS480.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFS480 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) | Siemens Semiconductor Group |
BFS480 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFS481 | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) | Siemens Semiconductor Group |
BFS481 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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