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PDF BFR460L3 Data sheet ( Hoja de datos )
| Número de pieza | BFR460L3 | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFR460L3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Low Noise Silicon Bipolar RF Transistor
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value 1500V (HBM)
• High fT of 22 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
BFR460L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR460L3
Marking
Pin Configuration
AB
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 108°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the collector lead at the soldering point to the pcb
Value
4.5
4.2
15
15
1.5
50
5
200
150
-55 ... 150
Unit
V
mA
mW
°C
1 2013-09-13
1 page  
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
24
dB
0.9
20
18
16 1.8
14 2.4
12 3
10 4
85
66
40 5 10 15 20 25 30 mA 40
IC
BFR460L3
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
24
dB
0.9
20
18
1.8
16
14 2.4
12 3
10 4
85
66
4
2
00.5 1 1.5 2 2.5 3 3.5 V 4.5
VCE
5 2013-09-13
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFR460L3.PDF ] | |
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