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Numéro de référence | BFR380T | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
BFR380T
NPN Silicon RF Transistor
Preliminary data
3
High current capability and low figure for
wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR380T
Marking
Pin Configuration
FCs
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 66°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
6
15
15
2
80
14
380
150
-65 ... 150
-65 ... 150
Value
220
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-01-2003
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Pages | Pages 4 | ||
Télécharger | [ BFR380T ] |
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