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BFR380F Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon Technologies AG - Linear Low Noise Silicon Bipolar RF Transistor

شماره قطعه BFR380F
شرح مفصل Linear Low Noise Silicon Bipolar RF Transistor
تولید کننده Infineon Technologies AG 
آرم Infineon Technologies AG 


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BFR380F شرح
Linear Low Noise Silicon Bipolar RF Transistor
High linearity low noise driver amplifier
Output compression point 19.5 dBm @ 1.8 GHz
Ideal for oscillators up to 3.5 GHz
Low noise figure 1.1 dB at 1.8 GHz
Collector design supports 5 V supply voltage
Pb-free (RoHS compliant) and halogen-free thin
small flat package with visible leads
Qualification report according to AEC-Q101 available
BFR380F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR380F
Marking
Pin Configuration
FCs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 95°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
80
14
380
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
145
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06

قانون اساسیصفحه 10
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