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Infineon Technologies AG - Low Noise Silicon Bipolar RF Transistor

Numéro de référence BFR360F
Description Low Noise Silicon Bipolar RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFR360F fiche technique
Low Noise Silicon Bipolar RF Transistor
Low noise amplifier for low current applications
Collector design supports 5 V supply voltage
For oscillators up to 3.5 GHz
Low noise figure 1.0 dB at 1.8 GHz
Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
Qualification report according to AEC-Q101 available
BFR360F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 98°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
35
4
210
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
250
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06

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