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Numéro de référence | BFR360F | ||
Description | Low Noise Silicon Bipolar RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5 V supply voltage
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BFR360F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 98°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
35
4
210
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
250
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06
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Pages | Pages 9 | ||
Télécharger | [ BFR360F ] |
No | Description détaillée | Fabricant |
BFR360 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR360 | NPN Silicon RF Transistor | Infineon Technologies AG |
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