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Infineon Technologies AG - NPN Silicon RF Transistor

Numéro de référence BFR360
Description NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFR360 fiche technique
NPN Silicon RF Transistor
Preliminary data
 Low voltage/ low current operation
 For low noise amplifiers
 For Oscillators up to 3.5 GHz and Pout > 10 dBm
 Low noise figure: 1.0 dB at 1.8 GHz
3
BFR360F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS  98°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
 250
Unit
V
mA
mW
°C
Unit
K/W
1 Jun-16-2003

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