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Numéro de référence | BFR360 | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
3
BFR360F
2
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR360F
Marking
Pin Configuration
FBs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 98°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
250
Unit
V
mA
mW
°C
Unit
K/W
1 Jun-16-2003
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Pages | Pages 8 | ||
Télécharger | [ BFR360 ] |
No | Description détaillée | Fabricant |
BFR360 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR360 | NPN Silicon RF Transistor | Infineon Technologies AG |
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