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Siemens Semiconductor Group - NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

Numéro de référence BFR35AP
Description NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BFR35AP fiche technique
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
BFR 35AP
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 35AP GEs
Q62702-F938
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 48 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
2.5
30
4
280
150
- 65 ... + 150
- 65 ... + 150
365
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996

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