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BFR340L3 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon Technologies AG - Low Noise Silicon Bipolar RF Transistor

شماره قطعه BFR340L3
شرح مفصل Low Noise Silicon Bipolar RF Transistor
تولید کننده Infineon Technologies AG 
آرم Infineon Technologies AG 


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BFR340L3 شرح
Low Noise Silicon Bipolar RF Transistor
Low voltage/ Low current operation
Transition frequency of 14 GHz
High insertion gain
Ideal for low current amplifiers and oscillators
Pb-free (RoHS compliant) and halogen-free thin small
leadless package
Qualification report according to AEC-Q101 available
BFR340L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR340L3
Marking
Pin Configuration
FA
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 120°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
10
2
60
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
500
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-09-03

قانون اساسیصفحه 6
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
BFR340L3 Low Noise Silicon Bipolar RF Transistor Infineon Technologies AG
Infineon Technologies AG

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