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Número de pieza | BFR340F | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFR340F (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• General purpose Low Noise Amplifier
• Ideal for low current operation
• High breakdown voltage enables
operation in automotive applications
• Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.2 x 1.2 mm2 ) with visible leads
• Qualification report according to AEC-Q101 available
BFR340F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR340F
Marking
Pin Configuration
FAs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 110°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
20
2
75
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
530
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06
1 page Total power dissipation Ptot = ƒ(TS)
BFR340F
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
80 0.4
V pF
60
50
40
30
20
10
00 15 30 45 60 75 90 105 120 A 150
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.9GHz
28
dBm
20
16
12
8
4
0
5V
3V
-4
2.5V
2V
-8
1.5V
1V
-12
-160 2 4 6 8 mA 11
IC
0.3
0.25
0.2
0.15
0.1
0.05
00 2 4 6 8 10 12 V 16
VCB
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
16
GHz
5V
12
3V
10
2V
8
1V
6
0.75V
4
2
00
2
4
6
8 mA
12
IC
5 2013-11-06
5 Page BFR340F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11 2013-11-06
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BFR340F.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFR340F | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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BFR340T | NPN Silicon RF Transistor | Infineon Technologies AG |
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