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BFR340F Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon Technologies AG - Low Noise Silicon Bipolar RF Transistor

شماره قطعه BFR340F
شرح مفصل Low Noise Silicon Bipolar RF Transistor
تولید کننده Infineon Technologies AG 
آرم Infineon Technologies AG 


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BFR340F شرح
Low Noise Silicon Bipolar RF Transistor
General purpose Low Noise Amplifier
Ideal for low current operation
High breakdown voltage enables
operation in automotive applications
Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz
Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.2 x 1.2 mm2 ) with visible leads
Qualification report according to AEC-Q101 available
BFR340F
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR340F
Marking
Pin Configuration
FAs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 110°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
20
2
75
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
530
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-11-06

قانون اساسیصفحه 11
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