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BFR280TW fiches techniques PDF

Vishay Telefunken - Silicon NPN Planar RF Transistor

Numéro de référence BFR280TW
Description Silicon NPN Planar RF Transistor
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BFR280TW fiche technique
BFR280T/BFR280TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 8 mA.
Features
D Low power applications
D Low noise figure
D High transition frequency
11
94 9280
23
BFR280T Marking: RE
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR280TW Marking: WRE
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 114 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
15
8
2
10
80
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85027
Rev. 2, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)

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