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Infineon Technologies AG - NPN Silicon RF Transistor

Numéro de référence BFR280
Description NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFR280 fiche technique
NPN Silicon RF Transistor
 For low noise, low-power amplifiers in mobile
communications systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
 fT = 7.5 GHz
F = 1.5 dB at 900 MHz
BFR280
3
2
1 VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR280
Marking
REs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  116 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
8
10
10
2
10
1.2
80
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
 425
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001

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