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PDF BFR194 Data sheet ( Hoja de datos )

Número de pieza BFR194
Descripción PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BFR194 Hoja de datos, Descripción, Manual

PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
• Complementary type: BFR 106 (NPN)
BFR 194
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 194 RKs
Q62702-F1346
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 73 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
3
100
10
700
150
- 65 ... + 150
- 65 ... + 150
110
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996

1 page




BFR194 pdf
BFR 194
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
800
mW
Ptot
600
500
400 TS
300 TA
200
100
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.002
0.01
0.005
D=0
10 2
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-13-1996

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