(PDF) BFR193W Datasheet - Low Noise Silicon Bipolar RF Transistor

Número de pieza	BFR193W
Descripción	Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193W Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 63°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 80 10 580 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 150 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit K/W 1 2014-04-07 1 page Package SOT323 BFR193W 5 2014-04-07 5 Page

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PDF BFR193W Data sheet ( Hoja de datos )