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Vishay Telefunken - Silicon NPN Planar RF Transistor

Numéro de référence BFR182T
Description Silicon NPN Planar RF Transistor
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BFR182T fiche technique
BFR182T/BFR182TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D Low noise figure
D High power gain
11
94 9280
23
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value
15
10
2
35
5
200
150
–65 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85025
Rev. 2, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
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