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BFR182 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Siemens Semiconductor Group - NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)

شماره قطعه BFR182
شرح مفصل NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
تولید کننده Siemens Semiconductor Group 
آرم Siemens Semiconductor Group 


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BFR182 شرح
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
fT = 8GHz
F = 1.2dB at 900MHz
BFR 182
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 182 RGs
Q62702-F1315
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 93 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
230
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Sep-04-1996

قانون اساسیصفحه 8
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