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PDF BFR182 Data sheet ( Hoja de datos )
| Número de pieza | BFR182 | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
• fT = 8GHz
F = 1.2dB at 900MHz
BFR 182
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 182 RGs
Q62702-F1315
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 93 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
≤ 230
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Sep-04-1996
1 page  
BFR 182
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
150
TA
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3 10 2
RthJSK/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Sep-04-1996
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFR182.PDF ] | |
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