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BFR181W Datasheet دیتاشیت PDF دانلود

دیتاشیت - Infineon Technologies AG - Low Noise Silicon Bipolar RF Transistor

شماره قطعه BFR181W
شرح مفصل Low Noise Silicon Bipolar RF Transistor
تولید کننده Infineon Technologies AG 
آرم Infineon Technologies AG 


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BFR181W شرح
Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads
Qualification report according to AEC-Q101 available
BFR181W
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR181W
Marking
Pin Configuration
RFs 1=B 2=E 3=C
Package
SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 90 °C
Junction temperature
Ambient temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
12
20
20
2
20
2
175
150
-65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
345
1TS is measured on the collector lead at the soldering point of the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2014-04-07

قانون اساسیصفحه 6
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
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