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PDF BFR181T Data sheet ( Hoja de datos )
| Número de pieza | BFR181T | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
BFR181T
3
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR181T
Marking
RFs
Pin Configuration
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 79°C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
405
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-09-2001
1 page  
BFR181T
Total power dissipation Ptot = f (TS)
200
mW
160
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp)
10 3
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 2
10 2
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
D=0
0.005
10 1 0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Aug-09-2001
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFR181T.PDF ] | |
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