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PDF BFR181T Data sheet ( Hoja de datos )
| Número de pieza | BFR181T | |
| Descripción | Silicon NPN Planar RF Transistor | |
| Fabricantes | Vishay Telefunken | |
| Logotipo |  |
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BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure
D High power gain
11
94 9280
23
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 78 °C
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value
15
10
2
20
2
160
150
–65 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85024
Rev. 2, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BFR181T.PDF ] | |
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