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PDF BSS138W Data sheet ( Hoja de datos )
| Número de pieza | BSS138W | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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 1. - 50V, 210mA, N-Channel MOSFET  Hay una vista previa y un enlace de descarga de BSS138W (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSS138W
60 V
3.5 Ω
0.28 A
SOT-323
Type
BSS138W
BSS138W
Package
SOT-323
SOT-323
Ordering Code
Q67042-S4187
Q67042-S4191
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SWs
SWs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
dv /dt
I D=0.28 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.28
0.22
1.12
6
±20
Class 1
0.50
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2004-04-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.6
10 V 7 V 5 V 4.5 V
0.5
0.4
0.3
0.2
0.1
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
2.9 V 3.2 V
3.5 V
BSS138W
4V
8
4V
3.5 V
3.2 V
2.9 V
6
4
2
4.5 V
5V
7V
10 V
0
012345
V DS [V]
0
0 0.1 0.2 0.3 0.4 0.5
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
0.6 0.4
0.35
0.5
0.3
0.4
0.25
0.3 0.2
0.15
0.2
0.1
0.1
0.05
0
012345
V GS [V]
0
0.00
0.10
0.20
0.30
0.40
I D [A]
Rev. 1.1
page 5
2004-04-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS138W.PDF ] | |
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