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KTC3876 fiches techniques PDF

WEITRON - Plastic-Encapsulate Transistors

Numéro de référence KTC3876
Description Plastic-Encapsulate Transistors
Fabricant WEITRON 
Logo WEITRON 





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KTC3876 fiche technique
Plastic-Encapsulate Transistors
NPN Silicon
KTC3876
COLLECTOR
BASE
EMITTER
3
1
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation TA =25 C
Junction and Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
TJ, Tstg
Value
30
35
5.0
500
Value
200
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1 mA dc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 35Vdc , IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc , IC=0)
Symbol Min Max Unit
V(BR)CEO
30
-
Vdc
V(BR)CBO
35
-
Vdc
V(BR)EBO
5.0
-
Vdc
ICBO - 0.1 uAdc
IEBO - 0.1 uAdc
WEITRON
http://www.weitron.com.tw
1/3
30-Jul-2012

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