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PDF KTC3875GR-G Data sheet ( Hoja de datos )
| Número de pieza | KTC3875GR-G | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Comchip | |
| Logotipo |  |
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General Purpose Transistor
KTC3875GR-G (NPN)
RoHS Device
Features
- High hFE
- Low noise
Circuit Diagram
1
Base
Collector
3
2
Emitter
0.055(1.40)
0.047(1.20)
SOT-23
0.118(3.00)
0.110(2.80)
3
1 : BASE
2 : EMITTER
3 : COLLECTOR
12
0.079(2.00)
0.071(1.80)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO 5 V
Collector current
IC 150 mA
Collector power dissipation
PC
150 mW
Thermal resistance from
junction to ambient
RθJA
833 °C/W
Junction temperature range
TJ
150 °C
Storage temperature range
Tstg
-55~+150
°C
0.045(1.15)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base breakdown voltage
IC=100μA , IE=0
V(BR)CBO
Collector-Emitter breakdown voltage IC=1mA , IB=0
V(BR)CEO
Emitter-Base breakdown voltage
IE=100μA , IC=0
V(BR)EBO
Collector cut-off current
VCB=60V , IE=0
ICBO
Emitter cut-off current
VEB=5V , IC=0
IEBO
DC current gain
VCE=6V , IC=2mA
hFE
Collector-emitter saturation voltage
IC=100mA , IB=10mA
VCE(sat)
Base-emitter saturation voltage
IC=100mA , IB=10mA
VCE(sat)
Transition frequency
VCE=10V , IC=1mA
fT
Collector output capacitance
Noise figure
VCB=10V , IE=0, f=1MHZ
VCB=6V , Ic=0.1mA, Rg=10kΩ
f=1KHZ
Cob
NF
Min
60
50
5
200
80
Typ
0.1
2.0
1.0
Max
0.1
0.1
400
0.25
1
3.5
10
Unit
V
V
V
µA
µA
V
V
MHZ
PF
dB
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR57
Comchip Technology CO., LTD.
REV: A
Page 1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KTC3875GR-G.PDF ] | |
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