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IXYS - Distributed Gate Thyristor

Numéro de référence R3636EC20T
Description Distributed Gate Thyristor
Fabricant IXYS 
Logo IXYS 





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R3636EC20T fiche technique
WESTCODE
An IXYS Company
Date:- 30 Mar, 2007
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R3636EC16# to R3636EC20#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
1600-2000
1600-2000
1600-2000
1700-2100
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C (note 2)
Maximum average on-state current. Tsink=85°C (note 2)
Maximum average on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
3636
2501
1518
7168
6233
38.9
42.7
7.57×106
9.12×106
500
1000
5
4
50
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 1 of 12
March, 2007

PagesPages 12
Télécharger [ R3636EC20T ]


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