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Numéro de référence | G2000HF450 | ||
Description | Anode Shorted Gate Turn-Off Thyristor | ||
Fabricant | IXYS | ||
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1 Page
Date:- 28 June, 2012
Data Sheet Issue:- P1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G2000HF450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM ≤4500V diGQ/dt=30A/µs, ITGQ=2000A and CS=4µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR≤10V.
5) IT=2000A repetitive, IGM=25A, diGM/dt=20A/µs. For di/dt>500A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
2000
200
890
1765
13.7
24.0
938×103
500
120
12
60
18
-40 to +125
-40 to +125
UNITS
A
nH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
°C
°C
Data Sheet. Types G2000HF450 Issue P1
Page 1 of 5
June, 2012
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Pages | Pages 5 | ||
Télécharger | [ G2000HF450 ] |
No | Description détaillée | Fabricant |
G2000HF450 | Anode Shorted Gate Turn-Off Thyristor | IXYS |
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