|
|
Datasheet P0327WC12C-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P03 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P0300E | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B  Teccor Electronics data | | |
| 2 | P0300S | SIDACtor Device SIDACtor Device
SIDACtor Device
DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and Teccor Electronics data | | |
| 3 | P0300Z | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
| 4 | P0303BD | N-Channel Enhancement Mode MOSFET P0303BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.7mΩ @VGS = 10V
ID2 87A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dr  UNIKC mosfet | | |
| 5 | P0303BKA | N-Channel Enhancement Mode MOSFET P0303BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.5mΩ @VGS = 10V
ID 89A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 6 | P0303BV | N-Channel Enhancement Mode MOSFET P0303BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID 20A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drai UNIKC mosfet | | |
| 7 | P0303YK | Dual N-Channel Field Effect Transistor NIKO-SEM
Dual N-Channel Enhancement Mode
P0303YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 3.5mΩ
Q1 30V 9mΩ
ID 79A 42A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Sourc  NIKO-SEM transistor | |
| Esta página es del resultado de búsqueda del P0327WC12C-PDF.HTML. Si pulsa el resultado de búsqueda de P0327WC12C-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |