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WILLAS - Plastic-Encapsulate Diodes

Numéro de référence BAV70DW
Description Plastic-Encapsulate Diodes
Fabricant WILLAS 
Logo WILLAS 





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BAV70DW fiche technique
WILLAS
S1O.0TA -S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR DREiCoTdIFeIEsRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAV70DTWHRU
FM1200-M+
Pb Free Product
SWITCHFIeNaGtuDrIOeDsE
FEATURBbEeaStttcehr
process
reverse
design,
leakage
excellent
current a
power diss
nd thermal
ipation offers
resistance.
z FaLsotwSpwroifticlehsinugrfaScepemeodunted application in order to
optimize board space.
z UlLtroaw-SpomwaelrlloSsusr,fhaigcheeMffiociuennct yP. ackage
z FoHrigGhecnurereranlt cPauprapboilsitye, lSowwfitocrwhianrgd vAopltpagliecadrtioopn. s
z H•• iGHgiuhgahCrdsoruinrnggdeufoccartpoaavnebcrilveitoyl.tage protection.
z PbU-Fltrraeheigpha-cskpeaegdesiwsitacvhainigla. ble
RoSHilSicopnroedpuitacxt ifaolrpplaancakrinchgipc,omdeetaslusffiliixco”Gn junction.
HaLleoagde-nfrefreepeaprtrsomduecett feonrvpiraocnkminegntaclosdteansduafrfdixs oHf
z MoRMiosIHLt-SuSrpTerDoSd-1euc9nt5sf0oit0ripv/2aitc2yk8inLgecvoedle1suffix "G"
Halogen free product for packing code suffix "H"
MAKINMGe: KchJAanical data
MaximuEmpoRxya:tUinLg9s4-V@0Traat=ed2f5lame retardant
Case : Molded plastic, SOD-123H
Terminals
:Plated
termPinaarlasm, seoltdeerrable
per
,
MIL-STD-750
Peak Repetitive PMeaekthRoedv2e0r2s6e Voltage
WorkingPoPleaariktyR: eInvdeicrsaeteVdoblytacgaethode band
DC BlocMkoinugntiVnog lPtaogseition : Any
ForwardWCeoignhttin: AupopursoxCimurarteendt0.011 gram
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
6 5 4 0.056(1.4)
123
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limit
0.031(0.8) Typ.
Unit
VRRM
100
VRWM Dimensions in1in0c0hes and (millimetersV)
VR 75
IFM 300
mA
Average RectiMfieAdXOIMuUtpMutRCAurTrIeNnGt S AND ELECTRICAL CHARACTERISTIOICS
150
mA
NRaotnin-gRseapt e2t5itiveamPbeiaekntFteomrwpearradturSeuurngleesCs uotrhreernwtise specified.@ t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
@ t = 1.0s
IFSM
1
A
  For capacitive load, derate current by 20%
Power DissipationRATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MHPFDM150-MH
200
FM160-MH FM180-MH
mW
FM1100-MH FM1150-MH FM1200-MH
UN
MTahrkeirnmg Caol dReesistance Junction to Ambient
12 13 14 RθJA15 16 625 18
10 /W 115
120
Maximum Recurrent Peak Reverse Voltage
MOapxiemruamtinRgMSJuVnolctatgioen Temperature
VRRM
20
30
40
50
60
80 100 150 200 Volt
VRMS
14
21
28 TJ 35
150
42 56
70 105
140 Volt
MSatxoimraugmeDTCeBmlopcekirnagtVuorletage
VDC 20 30 40 TST5G0 60 -55~+18500 100150 200 Volt
Maximum Average Forward Rectified Current
IO
1.0 Am
  EPLeaEk CFoTrwRarIdCSAurgLe CCuHrreAntR8.A3 mCsTsEingRleIhSaTlf sIiCneS-wa(vTea=2 IF5SMunless otherwise specified)
 
30
superimposed on rated load (JEDEC method)
Typical ThermalPRaersaismtaencteer(Note 2)
Typical Junction Capacitance (Note 1)
RSΘyJAmbol
CJ
Te  st conditions
 
M40in
120
OpReeravtienrgsTeembpreeraaktudreowRanngveoltage
TVJ (BR)
-55 to +IR1=252.5µA
  75
M  ax
 
-55 to +150
Unit
V
 
Am
℃/W
PF
Storage Temperature Range
  Reverse voltage leakage current
CHARACTERISTICS
TSTG
IR
VR=75V
- 65 to +175
2.5
µA
SYMBOL FM120-MH FM130-MHVFRM=12400-MVH FM150-MH FM160-MH FM180-M0H.F0M215100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.I5F0=1mA
0.70
0.78155
0.9 0.92 Volt
MaFxoimrwumarAdvevraogletaRgeeverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR VF
IF=10mA
IF=50mA
0.5 855 mV
10 1000
 
mAm
 
NOTES:
1- MJueanscurteiod nat c1 aMpHaZcaintadnapcpelied reverse voltage of 4.0 VDC.
Cj
IF=150mA
VR=0, f=1MHz
1250
2
pF
2- Thermal Resistance From Junction to Ambient
  Reveres recovery time
 
IF=IR=10mA,Irr=0.1×IR,
trr RL=100
4 ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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