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Numéro de référence | BF821 | ||
Description | SILICON EPITAXIAL TRANSISTORS | ||
Fabricant | CDIL | ||
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1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF821
BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BF821 = 1W
BF823 = 1Y
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (RBE = 2,7 kW )
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
–IC = 25 mA; –VCE = 20 V
Feedback capacitance at f = 1 MHz
· IC = 0; –VCE = 30 V
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 10 V
BF821
–VCB0 max.
–VCE0 max.
–VCER max.
–ICM max.
Ptot max.
Tj max.
300
—
300
BF823
250 V
250 V
–V
100 mA
250 mW
150 ° C
hFE >
50
Cre <
1,6 pF
fT >
60 MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
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Pages | Pages 3 | ||
Télécharger | [ BF821 ] |
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