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Galaxy Microelectronics - PNP High-Voltage Transistors

Numéro de référence BF821
Description PNP High-Voltage Transistors
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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BF821 fiche technique
PNP High-Voltage Transistors
FEATURES
z Low current(max.-50mA).
z High voltage(max.-300V).
z Complements:BF820,BF822.
Pb
Lead-free
APPLICATIONS
z Telephony and professional communication equipment.
Production specification
BF821/BF823
ORDERING INFORMATION
Type No.
Marking
BF821
BF823
1W
1Y
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BF821
BF823
BF821
BF823
-300
-250
-300
-250
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-50
IB Base Current-Peak
-50
Ptot Total Power Dissipation
250
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Unit
V
V
V
mA
mA
mW
C108
Rev.A
www.gmicroelec.com
1

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