|
|
Numéro de référence | BF821 | ||
Description | PNP High-Voltage Transistors | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
1 Page
PNP High-Voltage Transistors
FEATURES
z Low current(max.-50mA).
z High voltage(max.-300V).
z Complements:BF820,BF822.
Pb
Lead-free
APPLICATIONS
z Telephony and professional communication equipment.
Production specification
BF821/BF823
ORDERING INFORMATION
Type No.
Marking
BF821
BF823
1W
1Y
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BF821
BF823
BF821
BF823
-300
-250
-300
-250
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-50
IB Base Current-Peak
-50
Ptot Total Power Dissipation
250
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Unit
V
V
V
mA
mA
mW
℃
C108
Rev.A
www.gmicroelec.com
1
|
|||
Pages | Pages 3 | ||
Télécharger | [ BF821 ] |
No | Description détaillée | Fabricant |
BF820 | NPN high-voltage transistors | NXP Semiconductors |
BF820 | Small Signal Transistors (NPN) | General Semiconductor |
BF820 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
BF820 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |