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K6R4008V1B-P fiches techniques PDF

Samsung semiconductor - 512K x8 Bit High Speed Static RAM

Numéro de référence K6R4008V1B-P
Description 512K x8 Bit High Speed Static RAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K6R4008V1B-P fiche technique
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K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY
CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Design Target.
Draft Data
Jan. 1st, 1997
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item Previous
ICC
10ns
170mA
12ns
160mA
15ns
150mA
ISB f=max. 40mA
ISB1 f=0 10 / 1mA
IDR
VDR=3.0V
0.9mA
Current
205mA
200mA
195mA
50mA
10 / 1.2mA
1.0mA
Feb.11th.1998
Rev. 2.1
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
Icc
205/200/195mA
230/225/220mA
Jun.27th 1998
Rev. 2.2 Add 44 pins plastic TSOP(II) forward Package.
May. 4th 1999
Remark
Design Target
Preliminary
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.2
May 1999

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