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BC859B fiches techniques PDF

LGE - Transistor

Numéro de référence BC859B
Description Transistor
Fabricant LGE 
Logo LGE 





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BC859B fiche technique
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
BC859,BC860
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation *
Junction temperature
Storage temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tstg
Ramb
Rth j-a
BC859 BC860
-30 -50
-30 -45
-5
-100
-200
-200
250
150
-65 to +150
-65 to +150
500
Unit
V
V
V
mA
mA
mA
mW
K/W
http://www.luguang.cn

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