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BC856A Datasheet دیتاشیت PDF دانلود

دیتاشیت - Kingtronics - PNP Silicon Epitaxial Transistors

شماره قطعه BC856A
شرح مفصل PNP Silicon Epitaxial Transistors
تولید کننده Kingtronics 
آرم Kingtronics 


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BC856A شرح
BC856~BC859
PNP Silicon Epitaxial
Transistors
For switching and amplifier applications
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25)
PARAMETER
SYMBOL
Collector Base Voltage
BC856
BC857
BC858, BC859
-VCBO
Collector Emitter Voltage
BC856
BC857
BC858, BC859
-VCEO
Emitter Base Voltage
-VEBO
Collector Current
-IC
Peak Collector Current
-ICM
Power Dissipation
Ptot
Junction Temperature
TJ
Storage Temperature Range
Tstg
Characteristics at Ta = 25
PARAMETER
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at -VCB = 30 V
Collector Base Breakdown Voltage
at -IC = 10 µA
BC856
BC857
BC858, BC859
Collector Emitter Breakdown Voltage
at -IC = 10 µA
BC856
BC857
BC858, BC859
Collector Emitter Breakdown Voltage
at -IC = 10 mA
BC856
BC857
BC858, BC859
Emitter Base Breakdown Voltage
at -IE = 1 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, - IB = 0.5 mA
at -IC = 100 mA, - IB = 5 mA
Base Emitter On Voltage
at -IC = 2 mA, - VCE = 5 V
at -IC = 10 mA, - VCE = 5 V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -IC = 200 µA, -VCE = 5 V,
RG = 2 KΩ, f = 1 KHz
at -IC = 200 µA, -VCE = 5 V,
RG = 2 KΩ, f = 30~15 KHz
BC856, BC857, BC858
BC859
BC859
SYMBOL
hFE
-ICBO
-V(BR)CBO
-V(BR)CES
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cob
NF
VALUE
80
50
30
65
45
30
5
100
200
200
150
- 65 to + 150
UNIT
V
V
V
mA
mA
mW
MIN.
125
220
420
-
80
50
30
80
50
30
65
45
30
5
-
0.6
-
100
-
-
MAX.
220
475
800
15
-
-
-
-
0.3
0.65
0.75
0.82
-
6
10
4
4
UNIT
-
nA
V
V
V
V
V
V
MHz
pF
dB
Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099
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