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Numéro de référence | BC857 | ||
Description | PNP Transistor | ||
Fabricant | Multicomp | ||
Logo | |||
1 Page
PNP Transistor
General Purpose
SOT-23
Features:
• Low current (maximum100 mA)
• Low voltage (maximum 65 V)
Applications:
• General purpose switching and amplification
Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified
Parameter
Symbol
Value
Collector - Base Voltage
- BC856
- BC857
- BC858
VCBO
-80
-50
-30
Collector - Emitter Voltage
- BC856
- BC857
- BC858
Emitter - Base Voltage
Collector Current - Continuous
Collector Dissipation
Junction and Storage Temperature
VCEO
Vebo
IC
PC
Tj, Tstg
-65
-45
-30
-5
-0.1
250
-65 to +150
Unit
V
A
mW
°C
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emiter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
BC856, 857
BC856A, 857A, 858A
BC856B, 857B, 858B
BC857C, 858C
Symbol
V(BR) CBO
V(BR) CEO
V (BR) EBO
ICBO
IEBO
hFE
Test Conditions
IC = -10 µA IE=0 BC856
BC857
BC858
IC = -10 µA IB=0 BC856
BC857
BC858
IE = -1 µA IC = 0
VCB = -30 V IE = 0
VEB = -5 V, IC = 0
VCE = -5 V, IC = -2 mA
Minimum Typical Maximum Unit
-80
-50 -
-30
-
-65 V
-45
-30
-5 -
-
- -1 -15 nA
- - -0.1 µA
125 475
125
220
-
250
475
-
420 800
Collector-Emitter Saturation Voltage
VCE (sat)
IC = -100 mA, IB = -5 mA
IC = -10 mA, IB = -0.5 mA
-
-
-0.65
-0.3
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
28/06/12 V1.1
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Pages | Pages 6 | ||
Télécharger | [ BC857 ] |
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