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PDF BC817W-40 Data sheet ( Hoja de datos )
| Número de pieza | BC817W-40 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
VCBO
VCEO
VEBO
IC
IE
50
45
5
500
-500
Collector Power Dissipation
PC 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
UNIT
V
V
V
mA
mA
mW
BC817W
EPITAXIAL PLANAR NPN TRANSISTOR
E
MB
2
1
NK
M
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25+_ 0.15
C 0.90+_ 0.10
3
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L
HM
0.70
0.42
N 0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
VCB=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
VCE=1V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
MARK SPEC
TYPE
MARK
BC817W-16
2M
BC817W-25
2N
BC817W-40
2R
Marking
Type Name
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
UNIT
A
A
V
V
MHz
pF
Lot No.
2008. 9. 2
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC817W-40.PDF ] | |
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