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Numéro de référence | 2SD596 | ||
Description | NPN Transistor | ||
Fabricant | WEJ | ||
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1 Page
RoHS
2SD596
2SD596 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.2
Collector current
ICM: 0.7
Collector-base voltage
V(BR)CBO:
30
W (Tamb=25℃)
A
V
SOT-23-3L
TD1. BASE
.,L2. EMITTER
CO3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
OCollector-base breakdown voltage
Collector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
CEmitter cut-off current
ELEDC current gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
Test conditions
Ic=100µA, IE=0
Ic= 1 mA, IB=0
IE= 100µA, IC=0
VCB=30 V , IE=0
VEB= 5V , IC=0
VCE= 1V, IC= 100mA
VCE=1V, IC= 700mA
MIN
30
25
5
110
50
Collector-emitter saturation voltage
Base-emitter voltage
EJTransition frequency
VCE(sat) *
VBE(on) *
fT
IC=700 mA, IB= 70mA
VCE=6V, IC=10mA
VCE= 6V, IC= 10mA
0.6
140
TYP
MAX UNIT
V
V
V
0.1 µA
0.1 µA
400
0.6 V
0.7 V
MHz
W* Pulse test : Pulse width ≤350µs, Duty Cycle≤2%.
CLASSIFICATION OF hFE(1)
Marking
DV1
Range
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
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Pages | Pages 1 | ||
Télécharger | [ 2SD596 ] |
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