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2SC536M fiches techniques PDF

LZG - SILICON NPN TRANSISTOR

Numéro de référence 2SC536M
Description SILICON NPN TRANSISTOR
Fabricant LZG 
Logo LZG 





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2SC536M fiche technique
2SC536M(3DG536M)
2SC536KM(3DG536KM)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于小信号一般放大电路。
Purpose: Small signal general purpose amplifier applications.
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO
VCEO
VEBO
3DG536M
3DG536KM
3DG536M
3DG536KM
40
55
V
30
50
V
5.0 V
IC 100 mA
ICP 300 mA
PC 250 mW
Tj 150 ℃
Tstg
-55~150
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test Condition
最小值
Min
数值
Rating
典型值
Typ
最大值
Max
单位
Unit
ICBO VCB=35V
IE=0
1.0 μA
IEBO VEB=4.0V
IC=0
1.0 μA
hFE VCE=6.0V
IC=1.0mA
60
960
VCE(sat)
IC=50mA
IB=5.0mA
0.5 V
fT VCE=6.0V IC=1.0mA
100 MHz
Cob VCB=6.0V IE=0 f=1.0MHz
3.5 pF
CC.rbb
VCB=6.0V Ic=1.0mA f=31.9MHz
hFE 分档、印章/hFE classifications、Marking:
hFE 分档
hFE Classifications
D
E
hFE 范围
hFE Range
60~120 100~200
印章
Marking
H53D
H53E
250 pS
F GH
160~320 280~560 480~960
H53F
H53G
H53H
http://www.lzg.so

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