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2SC3356 fiches techniques PDF

LGE - NPN Transistor

Numéro de référence 2SC3356
Description NPN Transistor
Fabricant LGE 
Logo LGE 





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2SC3356 fiche technique
2SC3356
SOT-23-3L Transistor(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
Features
— Low noise amplifier at VHF, UHF and CATV band.
— Low Noise and High Gain
— High Power Gain
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3
0.1
0.25
150
-55-150
Units
V
V
V
A
W
SOT-23-3L
2.92
0.35
1.17
2.80 1.60
0.15
1.90
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC= 1mA, IB=0
Collector cut-off current
ICBO VCB=10V, IE=0
Emitter cut-off current
DC current gain
IEBO
VEB=1V, IC=0
hFE* VCE=10V, IC= 20mA
Transition frequency
fT VCE=10V, IC= 20mA
Noise figure
*pulse test: pulse width350μs, Duty cycle2%
NF
VCE=10V, IC= 7mA, f = 1GHz
MIN
20
12
50
TYP MAX UNIT
V
V
1 μA
1 μA
250
7 GHz
2 dB
CLASSIFICATION OF hFE
Marking
Rank
Range
R23
Q
50-100
R24
R
80-160
R25
S
125-250

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