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NE85633 fiches techniques PDF

Renesas - NPN Silicon RF Transistor

Numéro de référence NE85633
Description NPN Silicon RF Transistor
Fabricant Renesas 
Logo Renesas 





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NE85633 fiche technique
A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85633 / 2SC3356
Data Sheet
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Jun 28, 2011
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
<R> ORDERING INFORMATION
Part Number
NE85633
2SC3356
NE85633-T1B
2SC3356-T1B
Order Number
Package
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356-T1BA-
3-pin Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
20
12
3.0
100
200
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
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