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Galaxy Microelectronics - Silicon Epitaxial Planar Transistor

Numéro de référence 2SC2812
Description Silicon Epitaxial Planar Transistor
Fabricant Galaxy Microelectronics 
Logo Galaxy Microelectronics 





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2SC2812 fiche technique
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:hFE=200TYP
(VCE=6.0V,IC=1.0mA).
z High Voltage:VCEO=50V.
Pb
Lead-free
2SC2812
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
z Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
Marking
2SC2812
L4/L5/L6/L7
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
55
50
5
150
200
-55 to +150
Units
V
V
V
mA
mW
C241
Rev.A
www.gmicroelec.com
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