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DC COMPONENTS - PNP EPITAXIAL PLANAR TRANSISTOR

Numéro de référence 2SB772
Description PNP EPITAXIAL PLANAR TRANSISTOR
Fabricant DC COMPONENTS 
Logo DC COMPONENTS 





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2SB772 fiche technique
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB772
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Total Power Dissipation(TC=25oC)
Total Power Dissipation(TA=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PD
PD
TJ
TSTG
Rating
-40
-30
-5
-3
-7
-0.6
10
1
+150
-55 to +150
Unit
V
V
V
A
A
A
W
W
oC
oC
TO-126
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
.152(3.86)
.138(3.50)
.279(7.09)
.275(6.99)
1 23
3oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3oTyp
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
Dimensions in inches and (millimeters)
3oTyp
3oTyp
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -40
Collector-Emitter Breakdown Voltage
BVCEO -30
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
30
100
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.3
-1
-
200
80
55
Classification of hFE2
Rank
Q
P
E
Range
100~200
160~320
200~400
Max
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V
IE=0, VCB=-10V, f=1MHz

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