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2SA812 fiches techniques PDF

Kexin - PNP Transistors

Numéro de référence 2SA812
Description PNP Transistors
Fabricant Kexin 
Logo Kexin 





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2SA812 fiche technique
SMD Type
Transistors
PNP Transistors
2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)
High Voltage: VCEO = -50 V
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-60
-50
-5.0
-100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base to emitter voltage
Output capacitance
Transition frequency
* Pulsed: PW 350 u s, Duty Cycle
2%
Symbol
Testconditi ons
ICBO VCB = -60 V, IE = 0 A
IEBO VEB = -5.0 V, IC = 0 A
hFE VCE = -6.0 V, IC = -1.0 mA
VCE(sat) IC = -100 mA, IB = -10 mA
VBE VCE = 6.0 V, IC = -1.0 mA
Cob VCE = -10 V, IE = 0 A, f = 1.0 MHz
fT VCE = -6.0 V, IE = 10 mA
hFE Classification
Type
Range
Marking
2SA812-M4
90-180
M4
2SA812-M5
135-270
M5
2SA812-M6
200-400
M6
2SA812-M7
300-600
M7
Min
90
-0.58
Typ
200
-0.18
-0.62
4.5
180
Max
-0.1
-0.1
600
-0.3
-0.68
Unit
A
A
V
V
pF
MHz
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