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Numéro de référence | 2SA812QLT1 | ||
Description | General Purpose Transistors | ||
Fabricant | WILLAS | ||
Logo | |||
WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FE•ALToUwRpErofile surface mounted application in order to
optimize board space.
ƽ•HLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency.
ƽ•EHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage drop.
SOD-123H
0.146(3.7)
0.130(3.3)
ƽ•NHPiNghcosmurpgleemceanpta: 2bSiliCty1.623
ƽ•WGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. compliance with RoHS requirements.
•PUbl-tFrareheigpha-cskpaegede siswaitvcahiilnagb.le
•RSoiHlicSopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”liGco” n junction.
•HLaeloagde-fnrefreepeaprrtsodmuecet tfoernpvaircokninmgecnotadlesstaunffdixa“rHds” of
•MRMooiIHsLt-SuSrpTerDoSd-e1unc9st5ift0oiv0r ipt/y2ac2Lk8einvgelc1ode suffix "G"
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
DEMVHeIaClcoEghenMafrnAeeRicpKraoIdNludcGt afoAtr NapaDckiOngRcoDdEe RsuIfNfixG"HI"NFORMATION
D• eEvpicoexy
:
UL
94-V0
rated
Marking
flame retardant
Shipping
2•SCAa8s1e2Q: MLTo1lded plastic, SODM-1823H
3000/Tape&Reel
2• STAe8r m12i nRaLlTs1: P l a t e d
terminalsM, 6sold
er
able
per
,
MIL-ST30D0-07/5T0ape&Reel
0.031(0.8) Typ.
1
BASE
3
COLLE0C.0T4O0R(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
2•SPAo8la12riStyLT: I1ndicated by cathMod7e band
3000/Tape&Reel
2
Dimensions in inches and (milElimMeITtTeErsR)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RatinMgsAaXt 2IM5℃UMambRieAnt TteImNpGerSature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive loadR,adteinragte current by 20% Symbol
2SA812
Unit
Collector-Emitter Voltage
RATINGS
VCEOSYMBOL
-50 V
FM120-MH FM130-MH FM140-MH FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
U
MarkiCngoClleocdteor-Base Voltage
VCBO
12-60 13 V14 15 16
18 10
115 120
MaximEummitRteerc-uBraresnet PVeoalktaRgeeverse Voltage
Maximum RMS Voltage
Collector current-continuoun
Maximum DC Blocking Voltage
VEBO VRRM
VRMS
IC
VDC
20-6 30
V40
14 21 28
-150
mAdc
20 30 40
50
35
50
60
42
60
80 100 150 200 Vo
56 70 105 140 Vo
80 100 150 200 Vo
Maximum Average Forward Rectified Current
IO
1.0 A
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
30 A
superimposed on rated load (JEDEC method)
TypicaTl THheErmRaMl RAesListaCncHeA(NRotAe 2T)EERISTICS
TOyppeircaatlinJgunTcetimonpeCraatpuarecitRaanncCegeh(Naortaec1t)eristic
StoragTeoTteaml Dpeeravtiucree DRaisnsgiepation FR-5 Board, (1)
RΘJA
CJ
TJ
TSTG
Symb-o55l to +125 Max
PD
40
Uni t 120
- 65 to +175
-55 to +150
℃
P
℃
℃
TA=25oC
200 mW
Derate abovCeH2A5RoACCTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
FM120-MH
FM130-MH FM114.80-MH
0.50
FM150-mMHWF/MoC160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UN
Vo
MaximTumheArmvearalgReeRseisvetarsnecCeu, rJreunntcattion@tToAA=2m5b℃ient IR
R θJA
556
oC/W 0.5
mA
Rated TDoCtaBlloDckeivngicVeoDltaisgseipation @T A=125℃
PD
10
NOTESA: lumina Substrate, (2) TA=25 oC
200 mW
1- MeasDuererdaatet 1aMbHoZvean2d5aopCplied reverse voltage of 4.0 VDC.
2.4 mW/oC
2- ThermThaleRremsiastlaRnceesFisrotamnJcuen,ctJiounntoctAiomnbiteontAmbient
Junction and Storage Temperature
R θJA
Tj ,Tstg
417
-55 to +150
oC/W
oC
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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Pages | Pages 6 | ||
Télécharger | [ 2SA812QLT1 ] |
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